PART |
Description |
Maker |
MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
RJK03M0DPA RJK03M0DPA-00-J5A |
30V, 65A, 1.9mΩmax N Channel Power MOS FET
|
Renesas Electronics Corporation
|
MSC0305W MSC0305W-SOP8 |
-30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system P-channel MOS FET (-60V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH 3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
RJK0305DPB-02-15 |
30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ178 2SJ178-T 2SJ178-T/JD 2SJ178-T/JM |
P-channel power MOS FET P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK2906-01 |
N-channel MOS-FET N-channel MOS-FET 100 A, 60 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|